Part Number Hot Search : 
0PFTN SI5356A 2SD0973A SMF150AG C1000 MP2040 54HCT MAX14590
Product Description
Full Text Search
 

To Download DFM600XXM45-F000 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  df m 600x xm45 - f000 fast recovery diode module replaces ds5915 - 1.0 ds5915 - 2 december 2010 (ln 27892 ) 1 / 6 www.dynexsemi.com features ? low reverse recovery charge ? high switching speed ? low forward volt drop ? isolated alsic base w ith aln substrates ? dua l diodes can be paralleled for 12 00a rating ? lead free c onstruction ? 10.2kv isolation package applications ? chopper diodes ? boost and buck converters ? free - wheel circuits ? snubber circuit ? resonant converters ? induction heating ? multi - level switch inverters the df m 60 0x xm45 - f 000 is a dual 45 00v, fast recovery diode (frd) module. designed for low power loss, the module is suitable for a vari ety of high voltage applications in motor drives and power conversion. fast switching times and low reverse recovery losses allow high frequency operation, making the device suitable for the latest drive designs employing pwm and high frequency switching. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety . ordering information order as: df m 60 0x xm45 - f 000 note: when ordering, please use the complete part number key parameters v rrm 45 00 v v f (typ) 3.0 v i f (max) 60 0 a i fm (max) 12 00 a external co nnection required for a single 12 00a diode fig. 1 circuit configuration outline type code: x (see fig. 7 for further information) fig. 2 package 6( a) 4(a) 5(k) 7(k)
df m 600x xm45 - f000 2 /6 www.dynexsemi.com absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25c unless stated otherwise symbol parameter test conditions max. unit s v rrm repeti tive peak reverse voltage t j = 125c 45 00 v i f forward current (per arm) dc, t case = 80 c 60 0 a i fm max. forward current t case = 115 c , t p = 1ms 12 00 a i 2 t i 2 t value fuse current rating v r = 0, t p = 10ms, t j = 125c 192 ka 2 s p max max. pow er dissipation t case = 25c, t j = 125 c 4160 w v isol isolation voltage C per module commoned terminals to base plate. ac rms, 1 min, 50hz 102 0 0 v q pd partial discharge C per module iec1287, v 1 = 69 00v, v 2 = 510 0 v, 50hz rms 10 pc thermal and mechanica l ratings internal insulation material: aln baseplate material: alsic creepage distance: 56 mm clearance: 26 mm cti (comparative tracking index): > 600 symbol parameter test conditions min typ. max units r th(j - c) thermal resistance (per arm ) cont inuous dissipation C th(c - h) thermal resistance C j junction temperature - 40 - 125 c t stg storage temperature range - 40 - 125 c screw torque mounting C C
df m 600x xm45 - f000 3 / 6 www.dynexsemi.com static electrical characteristics C per arm t case = 25 c unless stated otherwise. symbol parameter test conditions min typ max units i rm peak reverse current v r = 45 00v, t j = 125c 60 ma v f forward voltage i f = 60 0a 3.0 v i f = 60 0a, t j = 125c 3.1 v l m i nductance - 40 nh dynamic electrical characteristics C per arm t case = 25c unless stated otherwise symbol parameter test conditions min typ. max units q rr reverse recovery charge i f = 60 0a v r = 225 0 v di f /dt = 300 0a/s 475 c i rr peak reverse recovery current 700 a e rec reverse recovery energy 600 mj t case = 125c unless stated otherwise symbol parameter test conditions min typ. max units q rr reverse recovery charge i f = 60 0a v r = 225 0v di f /dt = 300 0 a/s 850 c i rr peak r everse recovery current 820 a e rec reverse recovery energy 1050 mj
df m 600x xm45 - f000 4 /6 www.dynexsemi.com fig. 3 diode typical forward characteristics fig. 4 transient thermal impedance fig. 5 dc current rating vs case temperature fig. 6 reverse bias safe operating area (rbsoa)
df m 600x xm45 - f000 5 / 6 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 1100 g module outline type code: x fig. 7 module outline drawing 4 x m8 screwing depth max. 16 130 0.5 57 0.25 57 0.25 140 0.5 44 0.2 124 0.25 18 0.1 48 +1.5 -0.0 5 0.2 16.5 0.2 61.2 0.3 7 36.5 0.2 6 x 7 ? external connection external connection 7(c) 5(c) 6(a) 4(a)
df m 600x xm45 - f000 6 /6 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained tech nical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitabi lity of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning requirements are met. should additional product information be needed please contact c ustomer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction ma y cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because th ere is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and all owed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should alwa ys be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as fol lows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final chara cterisation for vo lume production is in progress. the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product order ed will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any bran d names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations customer service dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, unite d kingdom dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom fax: +44(0)1522 500550 fax: +44(0)1522 500020 tel: +44(0)1522 500500 tel: +44(0)1522 502753 / 502901 web: http://www.dynexsemi.com email: power_solutions@dynexsemi.com ? dyne x semiconductor ltd. 2007 . technical documentation C not for resale.


▲Up To Search▲   

 
Price & Availability of DFM600XXM45-F000

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X